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rev: 1.02 3/2002 1/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x 256k x 16 4mb asynchronous sram 6, 7, 8, 10, 12 ns 3.3 v v dd center v dd and v ss soj, tsop, fp-bga commercial temp industrial temp features ? fast access time: 6, 7, 8, 10, 12 ns ? cmos low power operation: 170/150/130/105/95 ma at minimum cycle time ? single 3.3 v power supply ? all inputs and outputs are ttl-compatible ? byte control ? fully static operation ? industrial temperature option: ?40 to 85c ? package line up j: 400 mil, 44-pin soj package tp: 400 mil, 44-pin tsop type ii package x: 6 mm x 10 mm fine pitch ball grid array package description the gs74116a is a high speed cmos static ram organized as 262,144 words by 16 bits. stat ic design eliminates the need for external clocks or timing strobes. the gs operates on a single 3.3 v power supply and all inputs and outputs are ttl- compatible. the gs74116a is available in a 6 x 10 mm fine pitch bga package, 400 mil soj and 400 mil tsop type-ii packages. pin descriptions soj 256k x 16-pin conf iguration (package j) fp-bga 256k x 16 bump configuration (package x) 6 x 10 mm bump pitch symbol description a 0 ?a 17 address input dq 1 ?dq 16 data input/output ce chip enable input lb lower byte enable input (dq1 to dq8) ub upper byte enable input (dq9 to dq16) we write enable input oe output enable input v dd +3.3 v power supply v ss ground nc no connect 123456 alb oe a 0 a 1 a 2 nc bdq 16 ub a 3 a 4 ce dq 1 cdq 14 dq 15 a 5 a 6 dq 2 dq 3 dv ss dq 13 a 17 a 7 dq 4 v dd ev dd dq 12 nc a 16 dq 5 v ss fdq 11 dq 10 a 8 a 9 dq 7 dq 6 gdq 9 nc a 10 a 11 we dq 8 hnca 12 a 13 a 14 a 15 nc 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a 4 a 3 a 2 a 1 a 0 ce dq 1 dq 2 dq 3 dq 4 v dd v ss dq 5 dq6 dq7 dq 8 we a 15 a 14 a 13 a 5 a 6 a 7 oe ub lb dq 16 dq 15 dq 14 dq 13 v ss v dd dq 12 dq 11 dq 10 dq 9 nc a 8 a 9 a 10 top view 21 22 24 23 a 12 a 11 44-pin soj a 17 a 16
rev: 1.02 3/2002 2/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x top view tsop-ii 256k x 16 pin co nfiguration (package tp) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a 4 a 3 a 2 a 1 a 0 ce dq 1 dq 2 dq 3 dq 4 v dd v ss dq 5 dq 6 dq 7 dq 8 we a 15 a14 a 13 a 5 a 6 a 7 oe ub lb dq 16 dq 15 dq 14 dq 13 v ss v dd dq 12 dq 11 dq 10 dq 9 nc a 8 a 9 a 10 top view 21 22 24 23 a 12 a 11 44 pin tsop ii a 17 a 16 memory array row decoder column decoder address input buffer control i/o buffer a 0 ce we oe dq 1 a 17 block diagram dq 16 ub _____ lb _____
rev: 1.02 3/2002 3/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x note: x: ?h? or ?l? note: permanent device damage may occur if absolute maximum ratings are exceeded. functional operatio n shall be restricted to rec- ommended operating conditions. exposure to higher than recommen ded voltages for extended periods of time could affect device reliability. truth table ce oe we lb ub dq 1 to dq 8 dq 9 to dq 16 v dd current h x x x x not selected not selected isb 1 , isb 2 llh l l read read i dd l h read high z h l high z read lxl ll write write l h write not write, high z h l not write, high z write l h h x x high z high z l x x h h high z high z absolute maximum ratings parameter symbol rating unit supply voltage v dd ?0.5 to +4.6 v input voltage v in ?0.5 to v dd +0.5 ( 4.6 v max.) v output voltage v out ?0.5 to v dd +0.5 ( 4.6 v max.) v allowable power dissipation pd 0.7 w storage temperature t stg ?55 to 150 o c
rev: 1.02 3/2002 4/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x note: 1. input overshoot voltage should be less than v dd +2 v and not exceed 20 ns. 2. input undershoot voltage should be greater than ?2 v and not exceed 20 ns. notes: 1. tested at t a = 25c, f = 1 mhz 2. these parameters are sampled and are not 100% tested. recommended oper ating conditions parameter symbol min typ max unit supply voltage for -7/-8/-10/-12 v dd 3.0 3.3 3.6 v supply voltage for -6 v dd 3.135 3.3 3.6 v input high voltage v ih 2.0 ? v dd +0.3 v input low voltage v il ?0.3 ? 0.8 v ambient temperature, commercial range t ac 0?70 o c ambient temperature, industrial range t a i ?40 ? 85 o c capacitance parameter symbol test condition max unit input capacitance c in v in = 0 v 5 pf output capacitance c out v out = 0 v 7 pf dc i/o pin characteristics parameter symbol test conditions min max input leakage current i il v in = 0 to v dd ? 1 ua 1 ua output leakage current i lo output high z v out = 0 to v dd ?1 ua 1 ua output high voltage v oh i oh = ?4 ma 2.4 ? output low voltage v ol i lo = +4 ma ? 0.4 v
rev: 1.02 3/2002 5/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x ac test conditions power supply currents parameter symbol test conditions 0 to 70c ?40 to 85c unit 6 ns 7 ns 8 ns 10 ns 12 ns 6 ns 7 ns 8 ns 10 ns 12 ns operating supply current i dd ce v il all other inputs v ih or v il min. cycle time i out = 0 ma 170 150 130 105 90 180 160 140 115 100 ma standby current i sb1 ce v ih all other inputs v ih or v il min. cycle time 40 40 30 25 25 50 50 40 35 35 ma standby current i sb2 ce v dd ? 0.2v all other inputs v dd ? 0.2 v or 0.2 v 10 20 ma dq vt = 1.4 v 50 ? 30pf 1 dq 3.3 v output load 1 output load 2 589 ? 434 ? 5pf 1 note: 1. include scope and jig capacitance. 2. test conditions as specified with output loading as shown in fig. 1 unless otherwise noted. 3. output load 2 for t lz , t hz , t olz and t ohz parameter conditions input high level v ih = 2.4 v input low level v il = 0.4 v input rise time tr = 1 v/ns input fall time tf = 1 v/ns input reference level 1.4 v output reference level 1.4 v output load fig. 1& 2
rev: 1.02 3/2002 6/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x ac characteristics * these parameters are sampled and are not 100% tested. read cycle 1: ce = oe = v il , we = v ih , ub and, or lb = v il read cycle parameter symbol -6 -7 -8 -10 -12 unit min max min max min max min max min max read cycle time t rc 6?7?8 ?10?12?ns address access time t aa ?6?7? 8 ?10?12ns chip enable access time (ce )t ac ?6?7? 8 ?10?12ns byte enable access time (ub , lb )t ab ?3?3?3.5? 4 ? 5 ns output enable to output valid (oe )t oe ?3?3?3.5? 4 ? 5 ns output hold from address change t oh 3?3?3 ? 3 ? 3 ?ns chip enable to output in low z (ce ) t lz * 3?3?3 ? 3 ? 3 ?ns output enable to output in low z (oe ) t olz * 0?0?0 ? 0 ? 0 ?ns byte enable to output in low z (ub , lb ) t blz * 0?0?0 ? 0 ? 0 ?ns chip disable to output in high z (ce ) t hz * ?3?3.5?4?5?6ns output disable to output in high z (oe ) t ohz * ?3?3?3.5? 4 ? 5 ns byte disable to output in high z (ub , lb ) t bhz * ?3?3?3.5? 4 ? 5 ns t aa t oh t rc address data out previous data data valid
rev: 1.02 3/2002 7/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x read cycle 2: we = v ih * these parameters are sampled and are not 100% tested. write cycle parameter symbol -6 -7 -8 -10 -12 unit min max min max min max min max min max write cycle time twc 6 ? 7 ? 8 ? 10 ? 12 ? ns address valid to end of write taw 5 ? 5 ? 5.5 ? 7 ? 8 ? ns chip enable to end of write tcw 5 ? 5 ? 5.5 ? 7 ? 8 ? ns byte enable to end of write tbw 5 ? 5 ? 5.5 ? 7 ? 8 ? ns data set up time tdw 3 ? 3.5 ? 4 ? 4.5 ? 6 ? ns data hold time tdh 0 ? 0 ? 0 ? 0 ? 0 ? ns write pulse width twp 5 ? 5 ? 5.5 ? 7 ? 8 ? ns address set up time tas 0 ? 0 ? 0 ? 0 ? 0 ? ns write recovery time (we ) twr 0?0?0?0?0?ns write recovery time (ce ) twr10?0?0?0?0?ns output low z from end of write twlz * 3?3?3?3?3?ns write to output in high z twhz * ?3?3?3.5?4?5ns taa trc address tac tlz tab tblz toe tolz ce ub , lb oe data out thz tbhz tohz data valid high impedance
rev: 1.02 3/2002 8/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x write cycle 1: we control write cycle 2: ce control twc address ce ub , lb we data in oe data out taw tcw tbw tas twp twr tdw tdh twlz twhz data valid high impedance twc address ce ub , lb we data in oe data out taw twp tas tcw twr1 tdw tdh data valid high impedance tbw
rev: 1.02 3/2002 9/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x write cycle 3: ub , lb control twc address ce ub , lb we data in oe data out taw twp tas tcw twr1 tdw tdh data valid high impedance tbw
rev: 1.02 3/2002 10/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x 44-pin, 400 mil soj 122 23 44 e b1 d a1 a2 y e h e q c l g e detail a a b a notes: 1. dimension d& e do not include interlead flash 2. dimension b1 does not include dambar protrusion / intrusion 3. controlling dimension: inches symbol dimension in inch dimension in mm min nom max min nom max a ? ? 0.148 ? ? 3.759 a1 0.025 ? ? 0.635 ? ? a2 0.105 0.110 0.115 2.667 2.794 2.921 b ? 0.018 ? ? 0.457 ? b1 0.026 0.028 0.032 0.660 0.711 0.813 c ? 0.008 ? ? 0.203 ? d 1.120 1.125 1.130 28.44 28.58 28.70 e 0.395 0.400 0.405 10.033 10.160 10.287 e ? 0.05 ? ? 1.27 ? h e 0.435 0.440 0.445 11.049 11.176 11.303 g e 0.360 0.370 0.380 9.144 9.398 9.652 l 0.082 0.087 0.106 2.083 2.210 2.70 y ? ? 0.004 ? ? 0.102 q 0 o ? 7 o 0 o ? 7 o
rev: 1.02 3/2002 11/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x 44-pin, 400 mil tsop-ii d 122 23 44 e b q a a1 a2 y c detail a e h e l l1 a notes: 1. dimension d& e do not include interlead flash. 2. dimension b does not include dambar protrusion/intrusion. 3. controlling dimension: mm symbol dimension in inch dimension in mm min nom max min nom max a ? ? 0.047 ? ? 1.20 a1 0.002 ? ? 0.05 ? ? a2 0.037 0.039 0.041 0.95 1.00 1.05 b 0.01 0.014 0.018 0.25 0.35 0.45 c ? 0.006 ? ? 0.15 ? d 0.721 0.725 0.729 18.31 18.41 18.51 e 0.396 0.400 0.404 10.06 10.16 10.26 e ? 0.031 ? ? 0.80 ? h e 0.455 0.463 0.471 11.56 11.76 11.96 l 0.016 0.020 0.024 0.40 0.50 0.60 l1 ? 0.031 ? ? 0.80 ? y ? ? 0.004 ? ? 0.10 q 0 o ? 5 o 0 o ? 5 o
rev: 1.02 3/2002 12/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x 6 mm x 10 mm fp-bga pin a1 index a1 e top view side view d a aaa pin a1 index e1 bottom view d1 c e e solder ball f b symbol unit: mm a 1.100.10 a1 0.20~0.30 f b f 0.30~0.40 c 0.36(typ) d 10.00.05 d1 5.25 e 6.00.05 e1 3.75 e 0.75(typ) aaa 0.10 a b c d e f g h 1 2 3 4 5 6
rev: 1.02 3/2002 13/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x ordering information part number * package access time temp. range status gs74116atp-6 400 mil tsop-ii 6 ns commercial gs74116atp-7 400 mil tsop-ii 7 ns commercial gs74116atp-8 400 mil tsop-ii 8 ns commercial gs74116atp-10 400 mil tsop-ii 10 ns commercial gs74116atp-12 400 mil tsop-ii 12 ns commercial gs74116atp-6i 400 mil tsop-ii 6 ns industrial gs74116atp-7i 400 mil tsop-ii 7 ns industrial gs74116atp-8i 400 mil tsop-ii 8 ns industrial gs74116atp-10i 400 mil tsop-ii 10 ns industrial gs74116atp-12i 400 mil tsop-ii 12 ns industrial gs74116aj-6 400 mil soj 6 ns commercial gs74116aj-7 400 mil soj 7 ns commercial gs74116aj-8 400 mil soj 8 ns commercial gs74116aj-10 400 mil soj 10 ns commercial gs74116aj-12 400 mil soj 12 ns commercial gs74116aj-6i 400 mil soj 6 ns industrial gs74116aj-7i 400 mil soj 7 ns industrial gs74116aj-8i 400 mil soj 8 ns industrial gs74116aj-10i 400 mil soj 10 ns industrial gs74116aj-12i 400 mil soj 12 ns industrial gs74116ax-6 fine pitch bga 6 ns commercial gs74116ax-7 fine pitch bga 7 ns commercial
rev: 1.02 3/2002 14/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x * customers requiring delivery in tape and reel should add th e character ?t? to the end of the part number. for example: gs74116atp-8t gs74116ax-8 fine pitch bga 8 ns commercial gs74116ax-10 fine pitch bga 10 ns commercial gs74116ax-12 fine pitch bga 12 ns commercial gs74116ax-6i fine pitch bga 6 ns industrial gs74116ax-7i fine pitch bga 7 ns industrial gs74116ax-8i fine pitch bga 8 ns industrial gs74116ax-10i fine pitch bga 10 ns industrial gs74116ax-12i fine pitch bga 12 ns industrial ordering information part number * package access time temp. range status
rev: 1.02 3/2002 15/15 ? 2001, giga semiconductor, inc. specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. gs74116atp/j/x 4mb asynchronous datasheet revision history rev. code: old; new types of changes format or content page #/revisions/reason 74116a_r1 format/content ? created new datasheet 74116a_r1; 74116a_r1_01 content ? added 6 ns and 7 ns speed bins ? updated power numbers ? changed fpbga package size from 7.2 x 11.65 mm to 6 x 10 mm ? changed package designator from ?u? to ?x? for fpbga ? changed d3 on fpbga pinout to a17 and e3 to nc 74116a_r1_01; 74116a_r1_02 content ? updated recommended operating conditions on page 4 ? updated read cycle and write cycl e ac characteristics tables

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